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NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch
Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications. Features: D Fast Turn-On Times @ TC = +100C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width 5s, Duty Cycle 10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) Table 2, IC = 100mA, IB = 0 ICEV ICER Emitter Cutoff Current ON Characteristics (Note 2) Collector-Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 700mA IC = 10A, IB = 1.3A Base-Emitter Saturation Voltage DC Current Gain Dynamic Characteristics Output Capacitance Switching Characteristics Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Storage Time Fall Time Inductive Load (Table 2) Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time tsv tfi tc tsv tfi tc IC = 10A, IB1 = 1.3A, VBE(off) = 5V, VCE(pk) = 400V TC = +100C - - - TC = +150C - - - 800 50 90 1050 70 120 1800 200 250 - - - ns ns ns ns ns ns td tr ts tf ts tf IC = 10A, VCC = 250V, IB1 = 1.3A, PW = 30s, Duty Cycle 2% IB2 = 2.6A, RB = 1.6 - - - - VBE(off) = 5V - - 20 200 1200 200 650 80 - - - - - - ns ns ns ns ns ns Cob VCB = 10V, IE = 0, ftest = 1kHz - - 400 pF VBE(sat) hFE IC = 10A, IB = 1.3A IC = 15A, VCE = 5V TC = +25C TC = +100C TC = +25C TC = +100C - - - - - 5 - - - - - - 2.5 3.0 3.0 1.5 1.5 - V V V V V IEBO VCEV = 850V, VBE(off) = 1.5V TC = +25C TC = +100C 450 - - - - - - - - - - 0.25 1.5 2.5 1.0 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit
VCE = 850V, RBE = 50, TC = +100C VEB = 6V, IC = 0
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case

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